These use the latest generation KIOXIA BiCS FLASH 3D flash memory with 3-bit-per-cell (tri-level cell, TLC) technology and are available in a 132-BGA package. Densities range from 512 gigabits (64 gigabytes) to 4 terabits (512 gigabytes) to support the unique demands of industrial applications including telecommunications, networking, and embedded computing. The devices support the temperature range -40°C to +85°C. Due to the fact that the performance and reliability of flash memory cells improves with a smaller number of bits per cell, the new KIOXIA devices feature a 1 bit per cell mode (single level cell, SLC) for applications that require faster read/write. times and high cellular endurance.
About Kioxia
In 1987, KIOXIA invented the world’s first NAND flash memory that did not require a power source (non-volatile memory). This technology is now used in various fields ranging from digital devices such as smartphones to data centers and has become an indispensable central element of the information society.
Products & Technology
KIOXIA meets customer needs through our technology leadership in flash memory and SSDs, and through our broad product portfolio.
Memory
Flash memory is now used in applications ranging from digital devices such as smartphones to storage memory products including USB drives and SSDs. We will continue to meet customer needs by offering BiCS FLASH™ 3D flash memory technology which offers even greater storage capacity and a wide range of flash memory products.
More Stories
Delay in mass production of new Intel products is a boon for AMD, share of AMD x86 server processors expected to exceed 22% in 2023, according to TrendForce
Quantum industry milestone brings mass production of quantum chips closer
NEO Battery Materials provides updates on installation of additional equipment for mass production optimization and final stages of commercial plant design for construction